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tga4514 1 triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com july 2009 ? rev a -30 -20 -10 0 10 20 30 28 29 30 31 32 33 34 35 36 37 38 frequency (ghz) gain & return loss (db) ? typical frequency range: 31 - 35 ghz ? 33.5 dbm nominal psat @ vd = 7v ? 31.5 dbm nominal p1db ? imd3: 31dbc at pout/tone=22dbm ? 18 db nominal gain ? bias 6 - 7 v, 1150 ma ? 0.25 um 2mi phemt technology ? chip dimensions 4.0 x 3.2 x 0.1 mm ? (0.161 x 0.128 x 0.004) in ? point-to-point radio ? military radar systems ? ka band sat-com bias conditions: vd = 6 v, id = 1150 ma gain irl orl 28 29 30 31 32 33 34 35 30 31 32 33 34 35 36 37 frequency (ghz) psat @ pin= 20dbm (dbm) bias conditions: vd = 6/7 v, id = 1150 ma vd = 7 v vd = 6 v 2 watt ka-band power amplifier key features primary applications measured performance product description the triquint tga4514 is power amplifier for ka- band applications. the part is designed using triquint?s proven standard 0.25 um gate power phemt production process. the tga4514 provides a nominal 33.5 dbm of output power at an input power level of 20 dbm with a small signal gain of 18 db. nominal imd3 is 31dbc at pout/tone of 22 dbm. the part is ideally suited for low cost markets such as point-to-point radio and ka-band sat-com. datasheet subject to change without notice.
tga4514 2 triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com july 2009 ? rev a table i absolute maximum ratings 1 / symbol parameter value notes vd-vg drain to gate voltage 13 v vd drain voltage 8 v 2 / vg gate voltage range -5 to 0 v id drain current 2.5 a 2 / ig gate current range -9 to 210 ma pin input continuous wave power 27 dbm 2 / tchannel channel temperature 200 c 1 / these ratings represent the maximum operable val ues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause per manent damage to the device and / or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in table iv. table ii recommended operating conditions symbol parameter 1 /v a l u e vd drain voltage 6 v id drain current 1150 ma id_drive drain current under rf drive 1500 ma vg gate voltage -0.45 v 1 / see assembly diagram for bias instructions.
tga4514 3 triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com july 2009 ? rev a table iii rf characterization table bias: vd = 6 v, id = 1150 ma, vg = -0.45 v typical symbol parameter test conditions nominal units gain small signal gain f = 31 - 35 ghz 18 db irl input return loss f = 31 - 35 ghz -7 db orl output return loss f = 31 - 35 ghz -10 db psat saturated output power @ pin = 20dbm f = 31 - 35 ghz 32.5 dbm p1db output power @ 1db gain compression f = 31 - 35 ghz 32 dbm imd3 imd3 @ pout/tone = 22dbm, freq = 33ghz f = 31 - 35 ghz 31 dbc
tga4514 4 triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com july 2009 ? rev a table iv power dissipation and thermal properties parameter test conditions value maximum power dissipation tbaseplate = 70 c pd = 10 w tchannel = 199 c thermal resistance, jc vd = 6 v id = 1.15 a pd = 6.9 w tbaseplate = 70 oc jc = 11.5 c/w tchannel = 149 c tm = 1.1e+6 hrs thermal resistance, jc under rf drive @ 33ghz vd = 6 v id = 1.45 a pout = 32.5 dbm pd = 6.9 w tbaseplate = 70 oc jc = 11.5 c/w tchannel = 149 c tm = 1.1e+6 hrs mounting temperature 30 seconds 320 c storage temperature -65 to 150 c median lifetime (tm) vs. channel temperature
tga4514 5 triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com july 2009 ? rev a 10 12 14 16 18 20 22 28 29 30 31 32 33 34 35 36 37 38 frequency (ghz) gain (db) bias conditions: vd = 6 v, id = 1150 ma, room temp. 28 29 30 31 32 33 34 35 30 31 32 33 34 35 36 37 frequency (ghz) psat @ pin = 20dbm (dbm) vd = 6 v vd = 7 v bias conditions: vd = 6/7 v, id = 1150 ma, room temp. measured data
tga4514 6 triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com july 2009 ? rev a -35 -30 -25 -20 -15 -10 -5 0 28 29 30 31 32 33 34 35 36 37 38 frequency (ghz) input return loss (db) bias conditions: vd = 6 v, id = 1150 ma, room temp. -35 -30 -25 -20 -15 -10 -5 0 28 29 30 31 32 33 34 35 36 37 38 frequency (ghz) output return loss (db) measured data
tga4514 7 triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com july 2009 ? rev a 25 26 27 28 29 30 31 32 33 34 35 31 32 33 34 35 36 37 frequency (ghz) pout (dbm) 25 26 27 28 29 30 31 32 33 34 35 30 31 32 33 34 35 36 frequency (ghz) pout (dbm) bias conditions: vd = 6 v, id = 1150 ma, room temp. psat @ pin=20dbm p1db bias conditions: vd = 7 v, id = 1150 ma, room temp. psat @ pin=20dbm p1db measured data
tga4514 8 triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com july 2009 ? rev a 0 5 10 15 20 25 30 35 -5-3-11357911131517192123 pin (dbm) pout (dbm) & power gain (db) 200 400 600 800 1000 1200 1400 1600 id (ma) bias conditions: vd = 6 v, id = 1150 ma, freq = 33 ghz, room temp. gain pout id 0 10 20 30 40 50 60 6 8 10 12 14 16 18 20 22 24 26 28 30 pout per tone (dbm) imd3 (dbc) bias conditions: vd = 6 v, id = 1150 ma, freq = 33 ghz, room temp. measured data
tga4514 9 triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com july 2009 ? rev a -10 -5 0 5 10 15 20 25 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) gain (db) bias conditions: vd = 6 v, id = 1150 ma +25 0 c -40 0 c +85 0 c measured data
tga4514 10 triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com july 2009 ? rev a rf output rf input tga4514 vg_bottom vg_top vd_top vd_bottom electrical schematic 1 3 5 2 6 4 bias procedures bias-up procedure bias-down procedure vg set to -1.5 v turn off rf supply vd_set to +6 v reduce vg to -1.5v. ensure id ~ 0 ma adjust vg more positive until quiescent id is 1115 ma. this will be ~ vg = -0.45 v turn vd to 0 v apply rf signal to input turn vg to 0 v
tga4514 11 triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com july 2009 ? rev a gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. mechanical drawing
tga4514 12 triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com july 2009 ? rev a gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. note: apply bias for vd on both sides. bias may be applied for vg from either side. recommended assembly diagram
tga4514 13 triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com july 2009 ? rev a assembly notes component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment (i.e. epoxy) can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: ? use ausn (80/20) solder and limit exposure to temperatures above 300 c to 3-4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. interconnect process assembly notes: ? thermosonic ball bonding is the pr eferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. ordering information part package style tga4514 gaas mmic die gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test.

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